It has not too long ago been reported that spinel-type sulfide (Zn,Mg)Sc2S4 possesses superior optoelec-tronic properties, together with each n- and p-type dopability and robust visible-light emission. Herein, we current a novel isomorphic selenide, ZnSc2Se4, synthesized utilizing a high-pressure synthesis method, which displays n-type semiconducting conduct. Moreover, an entire strong resolution between ZnSc2S4 and ZnSc2Se4 is realized, enabling steady tuning of direct optical band gaps from 2.07 to 1.35 eV (seen to near-infrared) by adjusting the S/Se ratio, accompanied by a pointy electrical conduc-tivity enhancement. These outcomes revealed that the spinel-type chalcogenide system is a extremely promising platform for photovoltaic absorbers. Moreover, by substituting isovalent Mg [(Zn1−zMgz)Sc2(S1−xSex)4], the band hole could be exactly managed throughout practically all the seen area (2.86–1.35 eV), provid-ing further tunability for high-efficiency light-absorbing and emitting purposes in the identical host lattice.
