Van der Waals (vdW) heterojunction photodetectors exhibit excessive efficiency resulting from its high-quality interface, excessive design flexibility, and distinctive properties of two-dimensional (2D) supplies. Notably, combining 2D semiconductors with technologically mature semiconductors provides a promising pathway towards high-performance photodetection. Herein, we report a high-performance self-driven photodetector primarily based on a vertical GeSe/Si vdW heterojunction, constructed utilizing high-quality GeSe single crystals grown by the chemical vapor transport methodology. Benefiting from the type-II band alignment and the robust built-in electrical area on the GeSe/Si interface. Consequently, the photodetector reveals a excessive responsivity of 29.8 A/W, a excessive EQE of 6959.7%, a excessive detectivity of two.1×1012 Jones, a quick rise/decay time of 8.5 μs/23.7 μs below 532 nm laser illumination at zero bias. As well as, the GeSe/Si vdW heterojunction photodetectors reveal steady broadband photoresponse and pronounced photovoltaic conduct below visible-light illumination (405-604 nm). This work highlights the benefits of integrating 2D GeSe with silicon by way of vdW heterojunction engineering and gives a major technique for creating self-driven, high-performance photodetectors towards sensible optoelectronic functions.
