Bio-inspired neuromorphic computing provides a revolutionary method by replicating brain-like functionalities in next-generation electronics. This research presents two versatile resistive reminiscence units fabricated utilizing DC magnetron sputtering, D1(Nb/V2O5/Ni) and D2(Nb/NbOx/V2O5/Ni). Machine D1 displays abrupt SET and gradual RESET switching, whereas D2 demonstrates totally gradual resistive switching (GRS), extremely fascinating for analog synaptic habits. Mechanistically, D1 is primarily ruled by oxygen vacancies, whereas D2 advantages from the synergistic interaction between oxygen vacancies and interfacial NbOx/NiO layers, confirmed by XPS depth profiling. These interfacial layers considerably improve D2’s GRS efficiency and synaptic constancy. Each units exhibit temperature-dependent management of oxygen vacancies, which dynamically will increase the reminiscence window, reducing the ON/OFF ratio. Multilevel resistive states are generated in each units by controlling the compliance present, with D2 outperforming D1 by exhibiting the next reminiscence window (~552) and distinctive endurance past 7000 cycles. Furthermore, each units successfully replicate organic synaptic capabilities reminiscent of LTP and LTD. Nonetheless, D2 additionally mimics complicated neural dynamics, together with spike time-dependent and rate-dependent plasticity. Simulation of D2’s synthetic neural community demonstrates ~86.75% wonderful accuracy degree, attributed to its linear, symmetric analog weight modulation and a number of conductance states. These outcomes spotlight the potential of V2O5-based units for high-performance neuromorphic computing.
