The usage of two-dimensional or nanoscaled supplies as energetic medium in resistive switching is changing into increasingly frequent within the neuromorphic and in-memory computing. Though many works have targeted their consideration on the resistive switching mechanism of the supplies, much less consideration is dedicated to understanding the position of the interfaces with the metallic electrodes, particularly when the electrode can also be used a substrate for the expansion of the fabric. Certainly, a low temperature development of the energetic materials on the biggest doable metallic substrate would enormously enhance the scalability and compatibility with back-end-of-line processing of the ensuing memristive units. Right here, we report that tellurium grown by vapour transport deposition at 100 °C on gold substrate improves its RS when the floor of the Au(111) reveals the well-known herringbone reconstruction. Certainly, the morphology of the nanoscaled tellurium is influenced by the gold floor reconstruction and, in flip, its resistive switching probed by conductive atomic drive microscopy. By comparability with the un-reconstructed floor, a non-negligible discount of the set and reset voltages is noticed. These outcomes exhibit that correct interface engineering between the fabric and electrodes may transform as necessary as the fabric itself for the memristive efficiency.
