Predicting the cost transport price, mechanism and the dielectric response of solid-state molecular electronics is difficult since these properties rely upon many variables reminiscent of molecular spine, electrode materials, junction contact geometry, anchoring and terminal useful teams, and so forth. Though the results of anchoring group (X) on the conductance of single-molecule junctions have been extensively investigated, in large-area junctions examples are uncommon though the latter makes it attainable to additionally discover the position of dielectric properties on cost transport charges. Right here we report a change of two.5 orders of magnitude within the cost transport price together with an element of three change within the measured dielectric fixed (ɛr) throughout monolayers of X(C6H4)nH with n=1 or 2 and X=-NO2, -SH, -NH2, -CN, and -Pyr. Our mixed research involving current-voltage measurements and impedance spectroscopy allowed us to isolate the contact (RC) and monolayer resistance (RSAM), and located that the RC elevated with the X order. This modification in RC goes hand-in-hand with the shift of HOMO and LUMO power ranges with respect to the Fermi ranges of the electrodes explaining the massive noticed change in cost transport charges. Surprisingly, the rise in tunneling charges (or lower in RSAM) scales with ɛr. Our work gives new insights into the components that affect the cost transport charges and dielectric responses of molecular junctions in addition to extensively studied adjustments to the molecular spine or terminal useful teams.
